Gate Turn Off thyristor

Gate turn off thyristor gate drive circuit

可关断晶闸管门极驱动电路

This paper analyzes the generation of over voltages V 1, V 2 and V 3 during the turnoff of gate turn off thyristor ( GTOs) and proposes measures to decrease the over voltages.

分析了大功率门极可关断晶闸管（GTO）关断过程中过电压V1，V2和V3的形成原因及抑制过电压的措施。

High Power Gate Turn-Off Thyristor ( GTO)

大功率可关断晶闸管（GTO）

Gate commutated thyristor ( GCT) is a new high power semiconductor devices based on Gate turn-off thyristor ( GTO), GCT has extensive application foreground and it is a blank in interiorly now.

门极换流晶闸管（GCT）是在GTO的基础上开发的一种新型大功率半导体器件，有广阔应用的前景，目前在国内尚属空白。

Study of power gate turn-off thyristor

大容量门极可关断晶闸管的研究

We researched mainly on Gate Turn-off Thyristor in qualitative analysis before.

以往对门极可关断晶闸管电流放大系数的研究主要集中在定性分析。